Particle contamination in commercial lithium-ion cells : risk assessment with focus on internal short circuits and replication by currently discussed trigger methods
A possible contamination with impurities or material weak points generated in cell production of lithium-ion batteries increases the risk of spontaneous internal short circuits (ISC). An ISC can lead to a sudden thermal runaway (TR) of the cell, thereby making these faults especially dangerous. Evaluation regarding the criticality of an ISC, the development of detection methods for timely fault warning and possible protection concepts require a realistic failure replication for general validation. Various trigger methods are currently discussed to reproduce these ISC failure cases, but without considering a valid basis for the practice-relevant particle properties. In order to provide such a basis for the evaluation and further development of trigger methods, in this paper, the possibilities of detecting impurity particles in production were reviewed and real particles from pouch cells of an established cell manufacturer were analysed. The results indicate that several metallic particles with a significant size up to 1 mm × 1.7 mm could be found between the cell layers. This evidence shows that contamination with impurity particles cannot be completely prevented in cell production, as a result of which particle-induced ISC must be expected and the need for an application-oriented triggering method currently exists. The cause of TR events in the field often cannot be identified. However, it is noticeable that such faults often occur during the charging process. A new interesting hypothesis for this so-far unexplained phenomenon is presented here. Based on all findings, the current trigger methods for replicating an external particle-induced ISC were evaluated in significant detail and specific improvements are identified. Here, it is shown that all current trigger methods for ISC replication exhibit weaknesses regarding reproducibility, which results mainly from the scattering random ISC contact resistance.